ALD 320 01
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ALD 320 – Plasma Atomic Layer Deposition

Compact Atomic Layer Deposition System – Plasma

  • Plasma-based ALD system
  • Option for Thermal ALD
  • 4” wafer holder with substrate heating
  • 300W/600W Hollow Cathode plasma source
  • 13.56 MHz RF power supply with matching unit
  • 2-6 precursors , 2-6 gas lines
  • Flexible design for any purpose, solar-cells, display-panels, semiconductors, MEMS, etc.
  • PC/PLC Control with Touch-screen HMI
  • Operation modes – manual, automatic, programming

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